Fabrication Procedure for Silicon Membrane X-Ray Lithography Masks.
Abstract
CH LEXINGTON LINCOLN LABFabrication Procedure for Silicon Membrane X-Ray Lithography Masks.Technical note,Cohen,Ronald A. ;Mountain,Robert W. ;Smith,Henry I. ;Lemma,Muriel A. ;Spears,David L. ;TN-1973-38F19628-73-C-0002DA-7-X-263304-D-215ESDTR-73-248(*X ray diffraction, *Masking), (*Wafers, X ray diffraction), Silicon, Membranes, Etching, Boron, FabricationA step-by-step procedure for the fabrication of silicon membrane x-ray lithography masks is described. The procedure involves the diffusion of boron into the polished face of an n-type <100> silicon wafer, the formation of gold absorber patterns on the boron diffused face, and the selective etching of the n-type silicon so as to produce thin membranes (2 to 5 microns thick) of silicon supporting the absorber patterns. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 20, 1973
- Accession Number
- AD0769857
Entities
People
- David L. Spears
- Henry I. Smith
- Muriel A. Lemma
- Robert W. Mountain
- Ronald A. Cohen
Organizations
- Massachusetts Institute of Technology