Reactive Plasma Deposition of Gallium Nitride Epitaxial Layers.
Abstract
The report describes a fundamental research effort to deposit epitaxial layers of gallium nitride (GaN) on suitable substrates using a reactive plasma deposition (RPD) technique and to characterize these layers crystallographically and electrically. RPD, as used here, is a method by which compounds are formed through synthesis of suitable source materials in a low-pressure high-frequency electrical discharge. GaN was synthesized by plasma reaction of trimethyl gallium and ammonia on single-crystal (0001) zinc oxide and 1,-1,0,2) sapphire as well as (111) and (100) silicon substrates at temperatures in the range of 20 to 600C. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1973
- Accession Number
- AD0769884
Entities
People
- Klaus C. Wiemer
Organizations
- Texas Instruments