Solid State Materials and Devices

Abstract

Generalized hydrodynamic carrier transport equations for semiconductors are derived for materials having comparable scattering and generation-recombination-trapping-tunneling rates. Band-to-band radiative recombination in n-type gallium arsenide doped with oxygen is measured by photomagnetoelectric and photoconductive methods at 20.8K and 4.2K. These same methods of measurement are used to reveal the dependence of excess carrier lifetimes on photoinjected carrier densities in gallium arsenide doped with chromium. The existence of an interfacial layer is revealed and its effects characterized for a gold-gallium arsenide Schottky diode by measurement of the current-voltage characteristics at very low reverse bias.

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Document Details

Document Type
Technical Report
Publication Date
Apr 10, 1973
Accession Number
AD0769962

Entities

People

  • Arthur J. Brodersen
  • C. T. Sah
  • Eugene R. Chenette
  • Fredrik A. Lindholm
  • Shengsan Li

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Boltzmann Equation
  • Circuits
  • Compound Semiconductors
  • Contracts
  • Crystals
  • Diodes
  • Electron Mobility
  • Electrons
  • Low Temperature
  • Materials
  • Scattering
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Short Circuits
  • Transistors

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics