Comments on DC Conductivity in Amorphous Semiconductors,
Abstract
A recent paper argued that the electrical conductivity arising from thermal hopping between localized states obeys the law ln sigma is proportional to minus ((T sub zero)/T) to the 1/3 power, at low temperatures. That result is found to be based on several unjustified assumptions, however, and the correct temperature dependence is ln sigma is proportional to minus ((T sub zero)/T) to the 1/4 power, as originally proposed by Mott. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0770054
Entities
People
- B. I. Halperin
- Martin R. Pollak
Organizations
- University of California, Riverside