Charge Trapping Effects in Thin Films of Al2O3 and SiO2.
Abstract
Electron and hole traps in MIS devices with pyrohydrolytic Al2O3 gate insulator have been investigated, using the MIS device as an integral detector of the charge stored in the oxide. The same detection technique has been used to investigate ionizing radiation-induced charge trapping effects in thin films of SiO2 incorporated into MIS capacitor structures. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1973
- Accession Number
- AD0770079
Entities
People
- Eliyahou Harari
Organizations
- Princeton University