Reliability of High Field Semiconductor Devices.
Abstract
D Semiconductor Devices.Semi-annual rept. no. 2, 1 Apr 72-1 Apr 73,2Ramachandran,T. B. ;Heaton,J. L. ;DAAB07-72-C-0101ECOM0101-72-2*Gunn diodes, *Semiconductor diodes, Reliability(Electronics), Gunn effect, Microwave oscillators, Gallium arsenides, Silicon, Transient radiation effects, FailureIMPATT diodesThe interim report describes the results of a continuing program of investigation concerning the reliability and failure modes of gallium arsenide Gunn and IMPATT diodes, and silicon IMPATT diodes. Data is presented concerning the burn-out distribuiton in time of Gunn diodes. Also, the changes in dc and RF parameters of 700 Gunn and 100 gallium arsenide IMPATT diodes resulting from 24 to 168 hours of dc high temperature burn-in are present. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1973
- Accession Number
- AD0770528
Entities
People
- J. L. Heaton
- T. B. Ramachandran
Organizations
- M/A-COM Technology Solutions