Electrical, Optical and Mechanical Behavior of Photoconducting II-VI Compound Semiconductors.
Abstract
The interrelationship of the electrical, optical and mechanical properties of II-VI compounds has been studied experimentally. Observed increases in flow stress during illumination with white light are shown to be the result of the interaction of charged dislocations with charged point defects. The introduction of charged dislocations during plastic flow leads to an increase and decrease in electrical conductivity in n- and p-type CdTe, respectively. These conductivity changes are consistent with the creation of an excess of dislocation donor states during deformation. Light is shown to decrease the resistance to crack propagation in CdTe. This change in crack extension resistance results from a decrease in plastic work accompanying fracture. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1973
- Accession Number
- AD0771015
Entities
People
- C. Norman Ahlquist
Organizations
- University of Colorado Boulder