GaAs Large Optical Cavity (LOC) Laser Diode for Communications Systems.

Abstract

T EMITTING DIODES, Communication equipment, Epitaxial growth, Performance(Engineering)DesignWork has been initiated on the development of an LOC laser diode to be used as the transmitting component for an optical communicator. During this first six month period, a package has been designed which meets the device requirements of low thermal resistance and low self inductance. A liquid phase epitaxial process has been developed to produce the multipler layer structures required to form the LOC lasing p-n junctions. Results of four layer structures are tabulated. Cross sections of typical layers are shown as photographed with a scanning electron microscope. Operating devices were constructed in which lasing was achieved at pulse repetition rates of 2.0MHz and a duty cycle of 4%. Plans for effort in future intervals are given. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1973
Accession Number
AD0771141

Entities

People

  • J. T. O'brien

Tags

DTIC Thesaurus Topics

  • Communication Equipment
  • Electron Microscopes
  • Electronic Equipment
  • Epitaxial Growth
  • Laser Diodes
  • Lasers
  • Liquid Phases
  • Microscopes
  • Optical Equipment
  • Optical Magnification Devices
  • Optomechanics
  • P-N Junctions
  • Repetition Rate
  • Resistance
  • Scanning Electron Microscopes
  • Thermal Resistance

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene