Mobile Central Switches (An Electron-Lithography Application).
Abstract
RON BEAM LITHOGRAPHY, *Random access computer storageMaximum density circuit fabrication techniques were applied to the fabrication of a 1024-bit random access memory based on a 2-transistor versatile memory/crosspoint switch cell of RADC design. Arranged as a 32 word by 32 bit matrix of cells on 20 x 24 micron centers, the memory chip design includes address decoding for selective enabling of three control busses per word to permit operation of the device as a random access memory, associative memory, crosspoint switch, or sample and hold switch. A two micron minimum geometry design rule was followed. Fourteen memory circuits and 4 test circuits were completed and the best units were mounted on ceramic carriers with 50-pin edge connectors. Static and dynamic tests of these devices showed operating transistors, decoders, and a memory word used for reset of data lines. Electron beam fabrication techniques were advanced during the program. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1973
- Accession Number
- AD0771545
Entities
People
- Luciano C. Scala
- Michael M. Sopira
- Paul R. Malmberg
- Terrence W. O'keeffe