Monolithic Microwave Module for Fuzing.
Abstract
The application of monolithic integrated circuit techniques to amplifiers capable of microwave frequency performance was explored. Processing of dielectrically isolated wafers incorporating high frequency transistors configured as a fixed gain amplifier resulted in power gain up to 600 MHz. In addition, an essentially flat power gain of 6 db was obtained from dc to 400 MHz. This report summarizes the design, development, and results obtained during the program. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1973
- Accession Number
- AD0771644
Entities
People
- Robert Guadagnolo