Effect of Formation Conditions on the Electrical Properties of Epitaxial P-N Junctions in Gallium Arsenide,
Abstract
Electrical properties were investigated of p-n junction in GaAs obtained by the method of liquid epitaxy. The electrical characteristics of p-n junctions obtained in a narrow temperature interval depend on the epitaxy temperature, which is explained by the corresponding dependences of the solidus curves of the corresponding quasibinary systems. The crystallographic orientation of the substrate significantly influences the electrical and optical properties of laser junctions. Acceptor impurities exert various effects on the electrical and optical properties of epitaxial laser semiconductor diodes. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 26, 1973
- Accession Number
- AD0771735
Entities
People
- U. M. Kulish
Organizations
- United States Army Foreign Science and Technology Center