Intrinsic Defects in II-VI Compounds.
Abstract
An extensive study using electron paramagnetic resonance (EPR), of the production of zinc vacancies and associated defects in ZnSe by 1.5 MeV room temperature irradiation and subsequent anneal has been performed vs. sample preparation and history. One important conclusion is that donors, initially present, are required for EPR observation of these defects. Evidence of enhanced vacancy anneal during irradiation is also found. Studies in ZnSe lightly doped with sulfur or tellurium reveal centers identified as zinc vacancies trapped next to the corresponding chalcogen impurity. Polarized light generation and bleaching studied of the V.Te center identify several optical transitions directly associated with the defect. Similar studies for the zinc vacancy-chlorine donor pair in ZnS reveal several optical transitions associated with it and allow a direct and unambiguous identification of the center as that responsible for the important 'self-activated' blue luminescence in zinc sulfide. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1973
- Accession Number
- AD0771797
Entities
People
- George D. Watkins
Organizations
- General Electric