Aluminum Oxide Passivation of Electron-Beam Semiconductor Silicon Diodes.
Abstract
DC and rf measurements have shown that beam-evaporated aluminum oxide constitutes a highly promising material for passivation of electron-beam-semiconductor targets. Aluminum-oxide-passivated targets are characterized by reverse breakdown voltages that range from 80% to essentially the full breakdown value and reverse leakage currents that are less than one microampere. A life of 2600 hours was demonstrated on an aluminum-oxide-passivated target at a current gain of 2200, a beam voltage of 12 kilovolts, power and current densities of 41.5 watts and 0.82 amperes per sq. mm, respectively, on a 0.012-inch active diameter. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1973
- Accession Number
- AD0772101
Entities
People
- H. C. Huang
- R. W. Paglione
- W. W. Siekanowicz
Organizations
- RCA Corporation