Electrical Properties of the Diffusion P-N Junctures of P-Type Gallium Arsenide,

Abstract

The paper discusses results of research on the influence of cooling on the volt-ampere characteristic of p-n junctures obtained by the diffusion of sulphur and tin. The relationship of the spark-over voltage to the gradient of concentration of the mixture in the field of the space charge and of the critical voltage of the electric field in a p-n juncture from the width of the field of the space charge is also discussed.

Document Details

Document Type
Technical Report
Publication Date
Nov 26, 1973
Accession Number
AD0772425

Entities

People

  • S. S. Khludkov
  • S. V. Mashnin

Organizations

  • United States Army Foreign Science and Technology Center

Tags

DTIC Thesaurus Topics

  • Diffusion
  • Electric Fields
  • Electrical Properties
  • Electricity
  • Electromagnetic Fields
  • Gallium
  • Gallium Arsenides
  • Language
  • Russian Language
  • Space Charge
  • Universities

Fields of Study

  • Materials science

Readers

  • Logistics and Supply Chain Management.
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster