Development of a Wideband Low-Noise L-Band Transistor Amplifier.
Abstract
At microwave frequencies, the recently developed small signal arsenic-diffused-emitter transistors offer high gain, reasonable compression levels, and low noise figure at low-bias levels. These characteristics make them attractive for use in low-noise preamplifiers in RF front ends of a multiport phased-array radar receiver. This report describes the development of a two-stage common-emitter amplifier, operating between 800 and 1400 MHz, using conventional microstrip techniques having a spot noise figure less than 4.00 dB, at a gain of 26.5 dB. Computer-aided design routines were used to obtain final designs from transistor S-parameters. Noise figure and stability criteria are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1973
- Accession Number
- AD0772529
Entities
People
- Raymond P. Meixner
Organizations
- United States Naval Research Laboratory