The Effects of Ionizing Radiation on Gallium Arsenide Phosphide Metal-Insulator-Semiconductor Structures,
Abstract
MIS capacitors were fabricated on n-type GaAs0.5P0.5 using a thermally grown chromium-doped insulator and chromium gate electrode. The fabrication procedures which lead to stable devices are described. The devices were exposed to both Co60 gamma rays and high-energy electrons. A qualitative model which relies on carrier injection and trapping in the GaAsP disordered region is proposed to explain the observed radiation-induced space charge buildup in the capacitors. Radiation-induced increases in the fast interface-state density were generally less than 15 percent of the pre-irradiation values and were found to be independent of radiation type and dose, as well as the gate bias applied during irradiation. Thermal annealing experiments show that the radiation-induced charge can be completely annealed at a temperature of 150C, independent of the gate bias applied during annealing. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1973
- Accession Number
- AD0772546
Entities
People
- Gordon J. Kuhlmann
- Wayne W. Grannemann
Organizations
- University of New Mexico