Feasibility of Silicon Carbide High Frequency, High Power Devices.
Abstract
Several material parameters of SiC were examined and figures of merit calculated to show the potential of SiC as a high frequency, high power device material. Schottky barrier diodes were prepared on n-type SiC by sputtering on a gold layer. The barrier voltage, measured by three techniques, was found to be 1.40 plus or minus 0.05 eV. An initial study was made on ion implanted layers (N2 into p-type SiC) but usuable diodes were not obtained. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1973
- Accession Number
- AD0772642
Entities
People
- Herbert S. Berman
- Robert B. Campbell
- Shu-yau Wu
Organizations
- Westinghouse Electric Corporation