Growth of Large Band Gap I-III-VI2 Crystals.

Abstract

Crystals were grown of copper gallium disulfide, silver gallium disulfide, and silver indium disulfide and characterized by x-ray diffraction. A small solid solution range exists for copper gallium disulfide (and probably for silver gallium disulfide, also) in which the color changes from red-orange through olive-green to black, with atendant lattice constant changes. Crystal growth was performed by iodine vapor transport, Bridgman, or in-place-recrystalization techniques. While most of the crystals were of chalcopyrite structures, AgInS2 was of wurtzite structure. A new compound was discovered: cooper dialuminum tetrasulfide, which is of spinel structure, is highly resistant to oxidation, and at least under certain conditions fluoresces green at room temperature. The most strongly fluorescent materials often seemed to be the aluminum chalcogenides which had been activated with copper impurities. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1973
Accession Number
AD0773180

Entities

People

  • William R. Cook Jr.

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Abstracts
  • Advanced Materials
  • Aluminum
  • Band Gaps
  • Band Structures
  • Crystal Growth
  • Crystals
  • Diffraction
  • Energy Bands
  • Engineered Materials
  • Impurities
  • Materials
  • Solid Solutions
  • Transition Temperature
  • X Rays
  • X-Ray Diffraction

Readers

  • Chemistry (specifically Chemical Fluorescence)
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene