Investigation of Transient Processes in Transistors during the Pulsed Action of Penetrating Radiation,
Abstract
Irradiation of the transistors was performed directly in the beam of the accelerated electrons by single pulses of a 2.5 microsecond duration. The ionization current of the collector-base junction, caused by the pulsed action of the radiation, was measured as a function of the dose rate.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 18, 1973
- Accession Number
- AD0773272
Entities
People
- E. N. Vologdin
- M. I. Markovich
- R. A. Mamedov
Organizations
- National Air and Space Intelligence Center