Studies of Silicon Extrinsic Detectors,
Abstract
Theoretical analyses of the effects of ion position correlation on the electron mobility in n-type silicon are compared with experiments. Steady-state and transient extrinsic photoconductivity are analyzed including the presence of recombination centers. Theoretical analyses are made of the photoionization cross-section of impurity for Coulomb and spherical square wells and compared with experimental data of shallow acceptors in silicon. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 28, 1973
- Accession Number
- AD0773301
Entities
People
- C. T. Sah
Organizations
- University of Illinois Urbana–Champaign