Chemical Vapor Deposition of Titanium Dioxide Film in Microelectronics,

Abstract

With high dielectric constant, titanium dioxide has been used for making a capacitor and field effect transistor in conjunction with silicon dioxide. High transconductance and low threshold voltage were observed.

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1972
Accession Number
AD0773425

Entities

People

  • H. C. Lin
  • Y. W. Hsuch

Organizations

  • University of Maryland

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Dielectric Permittivity
  • Dioxides
  • Field Effect Transistors
  • Silicon Dioxide
  • Titanium
  • Titanium Dioxide
  • Transistors
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene