Investigation of Semiconductor Devices in Linear Electron Accelerators,

Abstract

The article discusses ionization processes in semiconductor devices as a function of the intensity of pulsed irradiation in the range from 10 to the 7th power rad/s to 5 x 10 to the 10th power rad/s.

Document Details

Document Type
Technical Report
Publication Date
Dec 18, 1973
Accession Number
AD0773504

Entities

People

  • K. B. Vasilev
  • N. A. Ukhin
  • R. A. Mamedov
  • V. M. Ryazanskii

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electron Accelerators
  • Electronics
  • Electrons
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Intensity
  • Ionization
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Microelectronics