EBS Diode Arrays.

Abstract

S, Silicon, Fabrication, Specifications, Electrical properties, Gain, PassivityDesignThe objective of this study was to determine methods of fabricating an array of fifth silicon diodes for application in an electron beam semiconductor (EBS) device. Lateral dimensions of the diode array specified in the procurement specification were necessary requirements. The diode arrays were processed with poly silicon and aluminum as well as phosphorous glass passivating layers. An evaluation of the stability of the diode reverse characteristics under electron bombardment was made. Measurements of electron gain and pulse response were performed. Several 50 element diode arrays were fabricated, tested and evaluated. Recommendations for making electrical connections to the diode arrays were made. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1974
Accession Number
AD0774285

Entities

People

  • K. K. Schuegraf

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Aluminum
  • Compound Semiconductors
  • Electrical Properties
  • Electron Beams
  • Electronics
  • Electrons
  • Elements
  • Fabrication
  • Measurement
  • Procurement
  • Semiconductors
  • Solid State Electronics
  • Specifications
  • Test And Evaluation

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Metallurgy

Technology Areas

  • Directed Energy
  • Microelectronics