Photoluminescence and Annealing of the Implanted Nitrogen Isoelectronic Trap in GaAs(1-x)P(x),

Abstract

The goal of the investigation was to establish through photoluminescence the presence of the optically-active N isoelectronic trap in GaAs(1-x)Px following 14N(+) implantations. Study of annealing and damage associated non-radiative centers as a function of implantation fluence, substrate temperature, and material composition were explored. Photoluminescence data confirming optically active N trap incorporation is presented for two GaAs(1-x)Px compositions (x = 0.50, x = 0.37) on either side of the direct-indirect crossover.

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1973
Accession Number
AD0774319

Entities

People

  • Donald James Wolford Jr

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Annealing
  • Elements
  • Group 15 Elements
  • Heat Treatment
  • Implantation
  • Materials
  • Nitrogen
  • Photoluminescence
  • Substrates

Fields of Study

  • Materials science

Readers

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