Surface Temperature Measurements for Ion Bombarded Si and GaAs at 1.0 to 2.0 MeV.
Abstract
The use of ion implantation both as a research tool and as an electronic device fabrication technique has increased significantly in recent years. One parameter of interest is the temperature produced by the bombarding ions in the implanted volume during the irradiation. An infrared detector was used to measure these temperatures for ion beams of N+, N2+, O+, O2+, C+, CO+, and H+ at energies from 1 - 2.0 MeV and currents up to 12 micro amperes/sq cm. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 29, 1973
- Accession Number
- AD0774401
Entities
People
- D. E. Davies
- J. K. Kennedy
- L. F. Lowe
- L. J. Eyges
- M. L. Deane
Organizations
- Air Force Cambridge Research Laboratories