Microwave Field Effect Transistor Development.
Abstract
HE DEVELOPMENT OF A GALLIUM ARSENIDE Schottky barrier gate field effect transistor to deliver power at microwave frequencies. The program achieved 1.2 watts of saturated power at 3.0 GHz with six small (500 micrometers wide) devices wired in parallel on a single chip carrier. The small signal gain of individual devices at this frequency was as high as 10 dB with cut off frequencies of 10 GHz. A 5 dB gain at 3 GHz with 800 milliwatts of output power was achieved with 6 devices in parallel. Measurements were made of intermodulation products showing -23 dB third order IMP at small signal levels which is a typical result for devices that have not been optimized for low harmonic distortion. A mercury probe was developed for the rapid evaluation of expitaxial material for FET fabrication. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1973
- Accession Number
- AD0774462
Entities
People
- Donovan L. Barrett
- He B. Kim
- Martin J. Geisler
- Michael C. Driver