Ion Implantation of Semiconductors, Metals and Alloys.

Abstract

The effect of heavy ion implantation of GaAs, GaP, CdS and Al2O3 has been investigated using electron microscopy and Rutherford backscattering based on channelling. The variation of damage with ion dose, the annealing behaviour of implanted material and the lattice location of the foreign implants have been investigated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1973
Accession Number
AD0774654

Entities

People

  • G. Carter
  • W. A. Grant

Organizations

  • University of Salford

Tags

DTIC Thesaurus Topics

  • Annealing
  • Backscattering
  • Charged Particles
  • Compound Semiconductors
  • Electron Microscopy
  • Electronics
  • Electrons
  • Implantation
  • Ion Implantation
  • Ions
  • Materials
  • Microscopy
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene