New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals
Abstract
The purpose of this program was to develop new and improved methods for the growth and characterization of gallium arsenide (GaAs) and mixed III-V semiconductor crystals. This was accomplished by laboratory experiments and related theoretical research. New Czochralski, floating zone melting, gradient freeze, and liquid epitaxy techniques for GaAs growth were developed and studied. The travelling heater method for GaAs and III-V alloys was studied. Material was characterized by spark-source mass spectrometry, ion microprobe mass analyzer, glow-discharge spectroscopy, infrared absorption, dislocation etching, X-ray topography, cathodoluminescence, photoluminescence, Hall measurements, photothreshold, and C-V-W measurements on Schottky barriers. Dislocations generated by bending were observed by cathodoluminescence and the effect on electrical properties determined. A new technique for measuring and controlling oxygen in gallium melts was developed and studied.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1973
- Accession Number
- AD0774967
Entities
People
- Agerico Esquivel
- Clarence R. Crowell
- Murray Gershenzon
- William R. Wilcox
- Worth P. Allred
Organizations
- University of Southern California