Absorption Losses in Epitaxial PbTe Films for Potential Integrated Optics Application
Abstract
Optical absorption measurements at 300 K and 77K in the 2.5-12 micrometer range are presented for epitaxial PbTe films grown on BaF2 substrates. Effects due to carrier concentrations, growth conditions, and possible impurities are discussed. In high carrier concentration films (p > or = 10 to the 18th power/cc) the absorption is free-carrier limited, while in low p material the absorption appears to be impurity limited. The impurity limited absorption, which shows wide variations between samples, correlates with the observation of Cl in the ion back-scattering spectra. The lowest observed 10 micrometer loss is 16/cm. A threshold analysis on PbTe diode lasers made with annealed samples indicates the threshold gain is 10-20/cm, about a factor of 10 below that obtained in similar laser in unannealed films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1974
- Accession Number
- AD0775000
Entities
People
- M. Mikkor
- S. L. Mccarthy
- W. H. Weber
Organizations
- Ford Motor Company