Monte Carlo Calculations of Dose Distribution in SEM Irradiated Semiconductor Structures.
Abstract
Monte Carlo calculations were performed to determine the two-dimensional dose distribution in a metal/oxide/silicon substrate structure irradiated by the electron beam from a scanning electron microscope (SEM). The objective was to investigate energy deposition in transistors neighboring an MOS capacitor test pattern irradiated by a SEM electron beam. The principal conclusion is that no damage to neighboring transistors is predicted - the dose in the oxide layer 2 microns from the boundary of the test pattern is four orders of magnitude smaller than the soe dose in the test pattern oxide for a 20 keV beam. Plots and tables of depth dose distribution, radial dose distribution, dose distribution near a rectangular target pattern, charge deposition distribution, and radial distribution of reflected charge are presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 18, 1973
- Accession Number
- AD0775319
Entities
People
- William L. Chadsey