Microwave Field Effect Transistor Development.

Abstract

The purpose of the program was to fabricate a 10-watt F-Band field effect transistor. Two approaches were taken. The multiple mask approach was found to be cumbersome and generally difficult to execute for a 2.5 micron geometry device. Rather than pursue this approach, a second design was initiated which involved self-registration of the source and drain with respect to the gate by means of a selective epitaxial region which comprises the electrical channel. Due to several unanticipated process difficulties (for which solutions have been identified) time did not allow for completion of the fabrication portion of the FET-11 effort. Preliminary findings indicate that the approach is feasible and should be expected to yield microwave power field effect transistors. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1974
Accession Number
AD0775382

Entities

People

  • Herbert Goronkin

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • F Band
  • Fabrication
  • Field Effect Transistors
  • Geometry
  • Microwaves
  • Semiconductor Devices
  • Solid State Electronics
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design