Radiation Tolerance of GaAs Broadband Amplifier.
Abstract
The response and degradation characteristics of microstripline GaAs junction field-effect transistor integrated microwave amplifiers were investigated in radiation environments. Permanent changes in electrical performance due to fluences of 5x 10 to the 14th power and 1x 10 to the 15th power neutrons/sq cm (E > 10 KeV) are reported and discussed. Experimental results are compared with theoretical predictions of device transconductance changes, which have been established and verified prior to this investigation. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1973
- Accession Number
- AD0775384
Entities
People
- Allen F. Behle
- Rainer Zuleeg