Luminescent Material Preparation and Spectroscopy.

Abstract

Phosphorus ion implanted CdS was analyzed using C-V, I-V, thermally stimulated current and photovoltaic measurements. Properly annealed diodes were shown to have a p-i-n structure. A low voltage blue electroluminescence was observed at 77K in ion implantation fabricated p-n junction diodes. A channeling effect was observed by analysis of C-V data. Many shallow energy levels were identified, some of which have been previously reported and some of which are new to this work. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 20, 1973
Accession Number
AD0775473

Entities

People

  • Hong J. Chang
  • William W. Anderson

Organizations

  • Ohio State University

Tags

DTIC Thesaurus Topics

  • Diodes
  • Electroluminescence
  • Energy Levels
  • Implantation
  • Ion Implantation
  • Ions
  • Low Voltage
  • Materials
  • Measurement
  • P-N Junction Diodes
  • P-N Junctions
  • Phosphorus
  • Spectroscopy
  • Voltage

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology