Aluminum-Oxide Passivation of Electron-Beam-Semiconductor Silicon and Gallium-Arsenide Diodes.
Abstract
Beam-evaporated aluminum oxide constitutes a highly promising material for passivation of electron-beam-semiconductor targets. Aluminum-oxide-passivated targets are characterized by reverse breakdown voltages that range from 80% to essentially the full breakdown value and reverse leakage currents that are less than one microampere. A life of 2600 hours was demonstrated on an aluminum-oxide-passivated silicon pn-junction at a current gain of 2200, a beam voltage of 12 kV, and power and current densities of 42 W and 0.82 A/sq. mm, respectively. A life of 770 hours has been accumulated on a gallium-arsenide Schottky-barrier diode at a current gain of 2000, a beam voltage of 12.8 kV, power and current densities of 20 W and 0.48 A/sq. mm, respectively. The active diameter of each target was 0.012 inch. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1974
- Accession Number
- AD0775549
Entities
People
- Dorothy Hoffman
- Ho. C. Huang
- Stewart Jolly
- Wieslaw W. Siekanowicz
- Yuen C. Chiang
Organizations
- RCA Corporation