An Integrated High-Impedance Preamplifier,
Abstract
It is shown that an integrated circuit designed for a buried layer process can be made without a buried layer. Circuit and process details are given, together with experimental results. The circuit is an amplifier with a gain of 10 and an input impedance of 50 kiloohms. Performance is independent of temperature over a range from -40 to 80C with a satisfactory yield. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1973
- Accession Number
- AD0775792
Entities
People
- Bernard J. Rod
- Bohdan J. Dobriansky
Organizations
- Harry Diamond Laboratories