Donor Impurity Surface States in Semiconductors.

Abstract

The goals of this research were to use ESR as a tool to elucidate on the nature and properties of donor surface states, and also to use ESR signals to determine details in semiconductor surface structure. Germanium doped with antimony was chosen as the most interesting donor-semiconductor system for study and a major effort was invested in this system. Another project involved ESR studies on the ion implanted surface layer in silicon. The purpose of this research was to investigate in detail the structural transformation from the crystalline to the amorphous state in the surface layer as a result of the ion implantation.

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1974
Accession Number
AD0776012

Entities

People

  • Edward B. Hale

Organizations

  • Missouri University of Science and Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimony
  • Compound Semiconductors
  • Electronics
  • Germanium
  • Implantation
  • Impurities
  • Ion Implantation
  • Ions
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene