Solar Elements Based on Epitaxial GaAs Films,
Abstract
In recent years, the efforts of many investigators have been directed at the development of thin-film polycrystalline solar cells (s.c.), which, in comparison with monocrystalline s.c. have a better ratio of output to power-weight PV(W/kg) and a much lower cost. The authors obtained and investigated the principal characteristics of s.c. based on epitaxial films of gallium arsenide, which possess the maximum value for limiting efficiency for the solar spectrum and also are characterized by the best (in comparison with other materials) temperature relationships of its parameters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 03, 1974
- Accession Number
- AD0776171
Entities
People
- M. B. Kargin
- N. S. Karoleva
- T. P. Nuller
Organizations
- United States Army Foreign Science and Technology Center