Determinaton of Current vs. Electric Field Characteristics in Multivalley Semiconductors.
Abstract
A computer simulation of the dc transport characteristics for both isotropic and anisotropic semiconductors of any arbitrary band structure is developed. A distinct drifted Maxwell-Boltzmann distribution is used for each band. The zeroth, first and second moments of the Boltzmann equation are used to calculate the electron density, velocity and temperature in each of the conduction bands for an applied electric field of any arbitrary orientation. Acoustic phonon, optical phonon and polar optical phonon scattering are included in the analysis. A computer subroutine which calculates the collision integral due to phonon scattering by using numerical integration is developed and a solution scheme for the current vs. electric field characteristics which uses this subroutine is presented. The computer program is used to determine the current vs. electric field characteristics for n-Ge for given electric field orientations. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1973
- Accession Number
- AD0776806
Entities
People
- E. H. Sigman
Organizations
- University of Michigan