Study of Transient Radiation Effects on a Monolithic Integrated Operational Amplifier Circuit.
Abstract
The microAmp 776 micropower operational amplifier was irradiated in Cobalt-60, linear accelerator and fast burst reactor environments. The rest procedures used, the test results obtained, and an analysis of the radition induced failures are presented. Offset voltage increased 25% at 5600 rads (Si) Co60 exposure and up to 400% at 1 X 10 to the 5th power rads (Si) linac exposure. Open loop gain was degraded up to 70% at 6 X 10 to the 4th power rads (Si). Offset voltage approximately doubled at 4 X 10 to the 11th power n/cm (E > or = 10 keV), which is more significant at lower set currents where offset voltages are initially higher. Open loop gain decreased by up to 80% at 5 X 10 to the 11th power n/sq cm, largely due to decreased transistor current gain and partly due to a 30% reduction in quiescent current. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1974
- Accession Number
- AD0776913
Entities
People
- H. Schauer
- P. Hudson
Organizations
- United States Army Communications-Electronics Command