Quasi-Static Capacitance-Voltage Characteristics of MNOS Devices.

Abstract

The quasi-static (low-frequency) capacitance-voltage (CV) characteristics of metal-nitride-oxide-semiconductor (MNOS) memory devices are shown to exhibit distinguishable properties associated with memory and nonmemory behavior. Quasi-static CV analysis procedures, as developed by Kuhn, are applied to the MNOS nonmemory characteristics and reveal that the silicon-oxide interface-state densities are 100 times larger than for comparable nonmemory capacitor structures. Substrate surface-potential functions are constructed to model ideal nonmemory CV behavior and are used to compare with memory CV characteristics. Calculations are performed to show that the switching behavior observed experimentally is consistent with the quasi-static CV memory characteristics and with the mathematical models. Also, nonequilibrium quasi-static effects observed for MNOS memory transistor structures and deviations in normal quasi-static CV behavior of MNOS nonmemory capacitor structures are reported. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1973
Accession Number
AD0777586

Entities

People

  • George W. Trever

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Frequency
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Mathematical Models
  • Memory Devices
  • Metal Nitride Oxide Semiconductors
  • Models
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics