Study of Electronic Transport and Breakdown in Thin Insulating Films

Abstract

Progress is reported in the characterization of electronic transport and dielectric breakdown properties of technologically important, thin insulating films on Si, namely SiO2, Al2O3, Si3N4 and their composites. Theoretical modeling of self-quenching breakdown is under study with tunneling, joule-heating and their interaction (feedback) as the key ingredients. The dynamical behavior of runaway, hot-electron distributions has been extensively studied by graphical and computer techniques.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1973
Accession Number
AD0777817

Entities

People

  • Murray A. Lampert
  • Walter C. Johnson
  • Wilmer R. Bottoms

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Band Structures
  • Conduction Bands
  • Detection
  • Electron Beams
  • Electron Density
  • Electron Gas
  • Electron Irradiation
  • Electrons
  • Energy Bands
  • Energy Levels
  • Measurement
  • Microscopes
  • Oxide Films
  • P-N Junction Diodes
  • Semiconductors
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene