Electrodevelopment of High-Resolution Integrated Circuit Masks.
Abstract
The report details an investigation of the electrodevelopment process as applied to mask-making. The process places masks and developer by-products. This method and an older ultrasonic developer agitation method are compared as to developer concentrations and lifetimes, processing times, exposure values and tolerances to exposure ranges, ability to reproduce sub-micron images, image bloom and pinholing, defect densities, and image density. Electrodevelopment is further characterized for electrode compatibility and cell power requirements. Prototype and final electrodevelopment tanks were designed and integrated with the existing mask-making facility. The final design was successfully demonstrated during the fabrication of a number of integrated circuits. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1973
- Accession Number
- AD0777861
Entities
People
- Gary L. Hoe
Organizations
- Air Force Institute of Technology