Simplified Microcircuit Modeling.
Abstract
Results are presented on the application of previously developed techniques to generate radiation-inclusive simplified models of several types of digital and linear microcircuits of Medium-Scale Integrated/Large-Scale Integrated (MSI/LSI) complexity. Methods for including the effects of neutron degradation and electrical pulse overstress in simplified terminal models are developed. Models were generated for a Transistor-Transistor Logic (TTL) decade counter, Complementary/Metal Oxide Semiconductor (C/MOS) full adder, voltage comparator, video/buffer amplifier, low-level/voltage clamp amplifier, and a bootstrap amplifier. The models represent the electrical and radiation responses of the devices within engineering accuracy and are applicable to the computer-aided design and analysis of large electronic systems. It has been concluded that simplified microcircuit modeling is a viable and important technology that allows systems analysis on existing computer codes. Further development of generalized techniques is recommended. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1974
- Accession Number
- AD0777896
Entities
People
- C. W. Perkins
- D. N. Pocock
- M. G. Krebs