Defect Creation in Semiconductors,
Abstract
The bulk of the material deals with defects introduced by the interaction of energetic particles with the lattice, and the major portion of that deals with what is called displacement damage. Energetic particles interact with the lattice in two ways: (1) ionization of the lattice (and in most cases this is the dominant process); and, (2) direct collisions with the nucleus which result in a recoil energy being imparted to that nucleus (atom).
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0777982
Entities
People
- Jacques C. Bourgoin
- James W. Corbett
Organizations
- State University of New York