Low Temperature Growth of Cubic Gallium Nitride.

Abstract

The report describes progress made toward the synthesis of GaN thin films from chemical vapor deposition using the organometallic source triethylgallium monammine (Ga(C2H5)3.NH3). Work is reported on reflection electron diffraction and transmission electron diffraction measurements, along with preliminary scanning electron microscopy results. Problems related to oxygen contamination are discussed and their influence on Hall effect measurements are presented. Also discussed is the problem of reactant decomposition. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1974
Accession Number
AD0778702

Entities

People

  • J. E. Andrews
  • M. A. Littlejohn

Organizations

  • North Carolina State University

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Diffraction
  • Electron Diffraction
  • Electron Microscopy
  • Electrons
  • Gallium Nitrides
  • Hall Effect
  • Low Temperature
  • Measurement
  • Microscopy
  • Scanning Electron Microscopy
  • Thin Films
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene