The Effect of Carbon Additions on the Grain Growth and Strength of Hot Pressed Silicon Carbide.

Abstract

The growth of high aspect ratio alpha-SiC grains has been shown to seriously limit the material's load carrying capacity. It has been noted that the addition of excess carbon to hot pressed billets limits this discontinuous grain growth. A study was, therefore, undertaken to document the grain growth of SiC as a function of temperature for specimens containing 0, 1, 5, and 10 weight percent (wt %) chopped carbon fibers. The 5 and 10 wt % additions limited the discontinuous grain growth both during the initial hot pressing of specimens and during subsequent annealing studies at 2000 and 2150C. These data were interpreted using a modified Zener criterion. The fourpoint bend strength and modulus of hot pressed specimens containing 0, 5, 15, and 30 wt % carbon fibers were determined. Two groups of specimens containing different amounts of boron were examined. A strength maximum was noted for specimens that contained 5 wt % boron and 15 wt % carbon. Assuming that the fibers act as pores, a model is presented to explain the increasing and then decreasing strength of SiC as a function of increasing carbon fiber content. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1974
Accession Number
AD0778843

Entities

People

  • G. W. Hollenberg
  • R. L. Crane

Organizations

  • Air Force Research Laboratory

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Annealing
  • Aspect Ratio
  • Carbides
  • Carbon Fibers
  • Compound Semiconductors
  • Fibers
  • Grain Growth
  • Hot Pressing
  • Payload
  • Silicon
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Reinforced Composite Materials
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.