1.06 Micron Intensified Silicon Target TV Camera Tube.
Abstract
The objective of this contract was the fabrication and testing of negative electron affinity (NEA) II-V transmission secondary emission (TSE) dynodes which are to be incorporated into a silicon intensifier tube. The photocathode is to be an NEA GaAs semitransparent cathode. A reliable technique for fabricating GaAs dynodes has been developed which employs a combination of chemical and electromechanical etching. Uniformly thin smooth 0.5- to 0.8-cm diameter TSE dynodes 2 to 10 micrometers thick have been made. TSE gains of 2 to 20 have been observed in the 5- to 8-keV primary energy range for flat-band GaAs TSE dynodes. The low gains at these energies are the direct result of very high surface recombination velocities at the inactive surface. Seven image tubes have been built: five proximity-focused image intensifier tubes and two SIT tubes with a GaAs photocathode and a GaAs TSE dynode. The design and fabrication of each of these tubes are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1974
- Accession Number
- AD0779011
Entities
People
- Frederick R. Hughes
- Gilbert N. Butterwick
- Melvin L. Schultz
- Michael Ettenberg
- Ramon U. Martinelli