Photoluminescence from Irradiation-Induced Defects in Silicon,

Abstract

New information concerning the identification of radiative defects in Si is provided by three sets of experiments which study the photoluminescence from Si irradiated with electrons at low temperature (100K), Si subjected to ion implantations, and electron irradiations of Al and Ga doped Si. (Modified author abstract)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1974
Accession Number
AD0779314

Entities

People

  • John Robert Noonan

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Charged Particles
  • Electron Irradiation
  • Electrons
  • Identification
  • Implantation
  • Ion Implantation
  • Ions
  • Low Temperature
  • Photoluminescence
  • Subatomic Particle Manipulation
  • Subatomic Particles

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics