Crystal Properties as Influenced by Crystallographic Imperfection (Cadmium Telluride).

Abstract

The report consists of two parts. Part 1 reports a chemical-mechanical approach for generating damage-free and highly specular surfaces on single crystal and polycrystalline cadmium telluride and zinc selenide. The polishing agent is a clear solution of potassium bromide, sodium hypochlorite, sodium carbonate and water. Polishing is achieved by forming a reaction product on the primary surface, removing the reaction product, and exposing a new and fresh primary surface for continuing chemical action. Large perfect surfaces are thus obtained. Part 2 is concerned with the application of transmission electron microscopy, x-ray topography, and precision lattice parameter measurements to the characterization of cadmium telluride. New specimen preparation techniques were developed making the application of such techniques to the characterization of cadmium telluride possible. The defect structure of cadmium telluride crystals is resolved. Major defects are dislocation and tellurium inclusions. Measurement of lattice parameter, x-ray density, and thermal coefficient of expansion of CdTe are reported. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1973
Accession Number
AD0779801

Entities

People

  • Guenter H. Schwuttke

Organizations

  • International Business Machines Corporation (Armonk, NY)

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystals
  • Electron Microscopy
  • Measurement
  • Microscopy
  • Optical Materials
  • Polishing
  • Single Crystals
  • Sodium
  • Sodium Compounds
  • Tellurides
  • Tellurium
  • Transmission Electron Microscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Analytical Chemistry
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene