Self-Diffusion in Silicon Nitride.
Abstract
Progress is described in the first year of a program designed to obtain simultaneous measurement of Si and N self-diffusion coefficients in silicon nitride. Comparative measurements will be made at a given temperature in a variety of materials. Measurements will also be made as a function of temperature for one well characterized material. Neither Si nor N has an isotope suitable for use as a radiotracer. The stable isotopes Si29 and N15 are therefore being used as tracers. Mass spectrometry applied to sections removed serially from a sample will be used to establish isotope distributions. Determination of N15/N14 is being obtained from N2 using gas spectrometry; measurement of Si29/Si30 is being determined from BaSiF6 with hot filament analysis. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1974
- Accession Number
- AD0779901
Entities
People
- Bernhardt J. Wuensch
- Thomas Vasilos